APT33N90JCU3 APT33N90JCU3 ? rev 0 august, 2009 www.microsemi.com 1 ? 6 a s g d isotop ? absolute maximum ratings these devices are sensitive to electrostatic di scharge. proper handling pro cedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 900 v t c = 25c 33 i d continuous drain current t c = 80c 25 i dm pulsed drain current 75 a v gs gate - source voltage 20 v r dson drain - source on resistance 120 m p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 8.8 a e ar repetitive avalanche energy 2.9 e as single pulse avalanche energy 1940 mj application ? ac and dc motor control ? switched mode power supplies features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? outstanding performance at high frequency operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant isotop ? buck chopper super junction mosfet power module v dss = 900v r dson = 120m max @ tj = 25c i d = 33a @ tc = 25c a d g s
APT33N90JCU3 APT33N90JCU3 ? rev 0 august, 2009 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 900v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 900v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 26a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.5 3 3.5 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 6.8 c oss output capacitance v gs = 0v ; v ds = 100v f = 1mhz 0.33 nf q g total gate charge 270 q gs gate ? source charge 32 q gd gate ? drain charge v gs = 10v v bus = 400v i d = 26a 115 nc t d(on) turn-on delay time 70 t r rise time 20 t d(off) turn-off delay time 400 t f fall time inductive switching (125c) v gs = 10v v bus = 600v i d = 26a r g = 7.5 25 ns e on turn-on switching energy 1.5 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 600v i d = 26a ; r g = 7.5 0.75 mj e on turn-on switching energy 2.1 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 600v i d = 26a ; r g = 7.5 0.85 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current t c = 80c 30 a i f = 30a 2.6 3.1 i f = 60a 3.2 v f diode forward voltage i f = 30a t j = 125c 1.8 v t j = 25c 300 t rr reverse recovery time t j = 125c 380 ns t j = 25c 360 q rr reverse recovery charge i f = 30a v r = 800v di/dt=200a/s t j = 125c 1700 nc
APT33N90JCU3 APT33N90JCU3 ? rev 0 august, 2009 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit coolmos 0.43 r thjc junction to case thermal resistance diode 1.05 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -40 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. typical coolmos performance curve hard switching zcs zvs 0 50 100 150 200 250 10 12.5 15 17.5 20 22.5 25 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =600v d=50% r g =7.5 ? t j =125c t c =75c switching energy vs current eon eoff 0 1 2 3 4 5 10152025303540 i d , drain current (a) eon and eoff (mj) v ds =600v r g =7.5 ? t j =125c l=100h on resistance vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds(on) , drain to source on resistance (normalized) switching energy vs gate resistance eon eoff 0 1 2 3 4 5 101520253035 gate resistance (ohms) switching energy (mj) v ds =600v i d =26a t j =125c l=100h source gate drain anode
APT33N90JCU3 APT33N90JCU3 ? rev 0 august, 2009 www.microsemi.com 4 ? 6 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 6v 0 40 80 120 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =20, 8v 0 5 10 15 20 25 30 35 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 900 925 950 975 1000 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage maximum safe operating area 10 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 50 100 150 200 250 300 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =400v i d =26a t j =25c
APT33N90JCU3 APT33N90JCU3 ? rev 0 august, 2009 www.microsemi.com 5 ? 6
APT33N90JCU3 APT33N90JCU3 ? rev 0 august, 2009 www.microsemi.com 6 ? 6 typical chopper diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 20 40 60 80 0.0 1.0 2.0 3.0 4.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage trr vs. current rate of charge 15 a 30 a 45 a 0 100 200 300 400 500 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =800v qrr vs. current rate charge 15 a 30 a 45 a 0 1 2 3 4 0 200 400 600 800 1000 1200 -di f /dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =800v irrm vs. current rate of charge 15 a 30 a 45 a 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 -di f /dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =800v capacitance vs. reverse voltage 0 40 80 120 160 200 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 10 20 30 40 50 25 50 75 100 125 150 175 case temperature (oc) i f (av) (a) max. average forward current vs. case temp. duty cycle = 0.5 t j =175c ?coolmos? comprise a new family of transistors developed by in fineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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